现在位置: > > 工程科技 > 电子/电路

IXFN180N15P中文资料

IXFN180N15P中文资料

元器件交易网http://doc.docsou.com

PolarHTTM HiPerFETIXFN 180N15PPower MOSFET

N-Channel Enhancement ModeAvalanche RatedFast Intrinsic Diode

VDSS = 150 VID25 = 150 ARDS(on) ≤ 11 m trr ≤ 200 ns

SymbolVDSSVDGRVDSSVGSMID25ID(RMS)IDMIAREAREASdv/dtPDTJTJMTstgdISOLTL

Weight

Test Conditions

TJ= 25°C to 175°C

TJ= 25°C to 175°C; RGS = 1 M ContinuousTransientTC= 25°C

External lead current limit

TC= 25°C, pulse width limited by TJMTC= 25°CTC= 25°CTC= 25°C

IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,TJ≤ 150°C, RG = 4 TC= 25°C

Maximum Ratings

150

150±20±3015010038060100410680

VVVVAAAAmJJV/nsW

miniBLOC, SOT-227 B (IXFN) E153432

S

G

S

D

G = GateS = Source

D = Drain

Either Source terminal S can be used as theSource terminal or the Kelvin Source (gatereturn) terminal.

Terminal connection torque (M4)IISOL ≤ 1 mAt = 1 s1.6 mm (0.062 in.) from case for 10 s

-55 ... +175°C

175°C

-55 ... +150°C

1.5/13Nm/lb.in.3000V~

300

°C

Features

International standard package

Encapsulating epoxy meets

30 g

UL 94 V-0, flammability classification miniBLOC with Aluminium nitrideisolationl

Fast recovery diodel

Unclamped Inductive Switching (UIS)ratedl

Low package inductance-easy to drive and to protect

SymbolTest Conditions

(T

IXFN180N15P中文资料

J = 25°C, unless otherwise specified)VDSSVGS(th)IGSSIDSSRDS(on)

VGS= 0 V, ID = 250 µAVDS= VGS, ID = 4 mAVGS= ±20 VDC, VDS = 0VDS= VDSS, VGS = 0 V

TJ = 150°C

VGS= 10 V, ID = 90 APulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Characteristic Values

Max.1502.5

5.0±10025

50011

VVnAµAµAm

Advantages

lll

Easy to mountSpace savingsHigh power density

© 2006 IXYS All rights reserved

DS99241E(01/06)

相关文档
IXTP180N055T-21手册
IRF1404ZPBF中文资料 暂无评价 12页 免费 IXTP62N15P中文资料 暂无评价 5页 ...V DS - Volts V D S - Volts IXTA 180N055T IXTP 180N055T IXTQ 180...
IXFN150N15中文资料
IXFN150N15中文资料 隐藏>> 元器件交易网www.cecb2b.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 150N15 VDSS ID25 RDS(on)...
IXFN43N60中文资料
IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 600V 600V 600V 600V TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFK 43N60 ...
IXFN40N60中文资料
IXFN40N60中文资料 隐藏>> 元器件交易网www.cecb2b.com ADVANCE INFORMATION HiPerFETTM Power MOSFET Single MOSFET Die VDSS I D25 43A 40A 43A 40A RDS(on...
IXFN34N100中文资料
元器件交易网www.cecb2b.com HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 34N100 VDSS...
IXFN340N07_04中文资料
IXFN340N07_04中文资料_电子/电路_工程科技_专业资料。元器件交易网www.cecb2b...180 150 120 90 60 30 0 0 40 80 120 160 ID - Amperes 200 240 TJ=...
IXFN21N100Q中文资料
APT2X30D20J中文资料 暂无评价 2页 免费IXFN21N...pulse width limited by TJM TC = 25°C TC = 25°C IXFN 21N100Q VDSS...
IXFN230N10中文资料
TC = 25°C IXFN 230N10 D VDSS ID25 RDS(on) t rr = 100 V = 230...A B C D E F G H J K L M N O P Q R S T U Millimeter Min....
IXFN230N10中文资料
TC = 25°C IXFN 230N10 D VDSS ID25 RDS(on) t rr = 100 V = 230...A B C D E F G H J K L M N O P Q R S T U Millimeter Min....
相关主题
返回顶部
热门文档
你可能喜欢
  • BTS7960
  • lm358中文资料
  • 24c02中文资料
  • ds18b20中文资料
  • ds1302中文资料